TOKYO UNIVERSITY OF SCIENCE
KOBAYASHI LAB
Sputtering for Materials Innovation
About us
本研究室では、結晶成長によるマテリアルデザインを通じて、薄膜材料の機能融合に関する研究をおこなっています。 具体的には、半導体、超伝導体、強誘電体などの異種機能材料をナノスケールにまで薄膜化し互いに接合させることで、未来デバイス材料を創出することを目指しています。 特に、量子コンピュータ、量子情報通信、パワーエレクトロニクス、AI計算用新型半導体などの開発に繋がる薄膜材料の高品質化と高機能化に取り組んでいます。
Recent Publications
Enhanced transport properties in GaN heterostructures with sputter-epitaxy-grown ScAlN barriers via thermal annealing
T. Okuda, S. Ota, K. Kubota, Y. Wakamoto, S. Hashimoto, T. Seki, S. Toyama, N. Shibata, T. Kawahara, K. Makiyama, K. Nakata, K. Ikeda, T. Maeda, A. Kobayashi
Applied Physics Letters 127, 182103 (2025).
DOI: 10.1063/5.0294172
Structural evolution in sputter-epitaxial ScAlN films on GaN/SiC substrates
S. Fukuda, T. Kawahara, K. Makiyama, K. Nakata, A. Kobayashi
Japanese Journal of Applied Physics 64, 090901 (2025).
DOI: 10.35848/1347-4065/adff46
Effect of growth temperature on the structural and electrical properties of sputter-epitaxial ScAlN on AlGaN/AlN/GaN heterostructures
S. Ota, T. Okuda, K. Kubota, Y. Wakamoto, T. Maeda, T. Kawahara, K. Makiyama, K. Nakata, A. Kobayashi
APL Materials 13, 081112 (2025).
DOI: 10.1063/5.0281540
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
T. Okuda, S. Ota, T. Kawahara, K. Makiyama, K. Nakata, T. Maeda, A. Kobayashi
Applied Physics Letters 126, 052105 (2025).
DOI: 10.1063/5.0228924
Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics
A. Kobayashi, T. Maeda, T. Akiyama, T. Kawamura, Y. Honda
Physica Status Solidi A , 2400896 (2025).
DOI: 10.1002/pssa.202400896
Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering
A. Kobayashi, Y. Honda, T. Maeda, T. Okuda, K. Ueno, H. Fujioka
Applied Physics Express 17, 011002 (2024).
DOI: 10.35848/1882-0786/ad120b
Structural and optical properties of epitaxial ScxAl1-xN coherently grown on GaN bulk substrates by sputtering method
T. Maeda, Y. Wakamoto, S. Kaneki, H. Fujikura, A. Kobayashi
Applied Physics Letters 125, 022103 (2024).
DOI: 10.1063/5.0213662
Hole Conduction Mechanism in In–Mg-Codoped GaN Prepared via Pulsed Sputtering Deposition
A. Naito, K. Ueno, A. Kobayashi, H. Fujioka
Physica Status Solidi A, 2300848 (2024).
DOI: 10.1002/pssa.202300806
Temperature‐Dependent Characteristics of AlN/Al0.5Ga0.5N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts
R. Maeda, K. Ueno, A. Kobayashi, H. Fujioka
Physica Status Solidi A, 2300848 (2024).
DOI: 10.1021/acsaelm.2c01288
