0.  Author, ``Title," Journal, Page, Year/Month. 
1.  ‘ê“c éD�l, �¼‰Y ’BŽ¡, ŠÝ“c —º, •ºŒÉ –¾, ``Correlated Level Shifting‹Z�p‚É‚æ‚é—£ŽUŽžŠÔ“ñŽŸƒ¢ƒ°A/D•ÏŠ·Ší‚ÌSQNR‰ü‘P‚Æ�‚’²”g˜c‚Ì—}�§," “d‹CŠw‰ï˜_•¶Ž�‚b�i“dŽq�E�î•ñ�EƒVƒXƒeƒ€•”–åŽ��j, 141Šª, 12�†, pp. 1313-1320, 2021/12. 
2.  S. Sekine, T. Matsuura, R. Kishida, and A. Hyogo, ``Digital Calibration Algorithm of Conversion Error Influenced by Parasitic Capacitance in C-C SAR-ADC Based on ƒÁ-Estimation," IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, vol. E104-A, no. 2,pp. 516-524, 2021/02. 
3.  T. Hosaka, S. Nishizawa, R. Kishida, T. Matsumoto, and K. Kobayashi, ``Universal NBTI Compact Model Replicating AC Stress/Recovery from a Single-shot Long-term DC Measurement," IPSJ Transactions on System LSI Design Methodology, vol.13, pp. 56-64, 2020/08. 
4.  R. Kishida, T. Asuke, J. Furuta, and K. Kobayashi, ``Extracting Voltage Dependence of BTI-induced Degradation without Temporal Factors by Using BTI-Sensitive and BTI-Insensitive Ring Oscillators," IEEE Transactions on Semiconductor Manufacturing, vol. 33, no. 2, pp. 174-179, 2020/05. 
5.  ŠÖ�ª Œd, �¼‰Y ’BŽ¡, ŠÝ“c —º, •ºŒÉ –¾, ``�®�”—e—Ê”ä‚ð—p‚¢‚½C-2C D/A•ÏŠ·Ší‚Ì�ÝŒvŽè–@," “d‹CŠw‰ï˜_•¶Ž�‚b�i“dŽq�E�î•ñ�EƒVƒXƒeƒ€•”–åŽ��j, 140Šª, 2�†, pp. 194-203, 2020/02. 
6.  R. Kishida, J. Furuta, and K. Kobayashi, ``Evaluation of plasma-induced damage and bias temperature instability depending on type of antenna layer using current-starved ring oscillators," Japanese Journal of Applied Physics (JJAP), vol. 57, no. 4S, pp. 04FD12-1-5, 2018/03. 
7.  T. Komawaki, M. Yabuuchi, R. Kishida, J. Furuta, T. Matsumoto, and K. Kobayashi, ``Replication of Random Telegraph Noise by Using a Physical-Based Verilog-AMS Model," IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, vol. E-100A, no. 12, pp. 2758-2763, 2017/12. 
8.  R. Kishida, A. Oshima, M. Yabuuchi, and K. Kobayashi, ``Initial and long-term frequency degradation of ring oscillators caused by plasma-induced damage in 65 nm bulk and fully depleted silicon-on-insulator processes," Japanese Journal of Applied Physics (JJAP), vol. 54, no. 4S, pp. 04DC19-1-5, 2015/03. 
9.  M. Yabuuchi, R. Kishida, and K. Kobayashi, ``Correlations between BTI-Induced Degradations and Process Variations on ASICs and FPGAs," IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences, vol. E97-A, no. 12, pp. 2367-2372, 2014/12.