Publication list

村口　正弘　(Masahiro Muraguchi)

工学部電気工学科教授

専門分野

無線通信システム

光通信システム

超高速・超高周波LSI設計

マイクロ波回路

担当講義

電気工学基礎２（１年、後期）

電気磁気学２（２年、後期）

通信方式１（２年、後期）
通信方式２（３年、前期）
通信用LSI（３年、後期）

電気工学実験３（３年、通年）

ディジタル通信特論１（大学院、前期）

ディジタル通信特論２（大学院、後期）
マイクロ波工学（第２部、前期）

所属学会

IEEE

電子情報通信学会

（現在 APMC国内委員会委員長）

略歴

1983　東京工業大学大学院博士課程修了、工学博士

1983-2005 日本電信電話株式会社（NTT）勤務

1995-1999 ﾜｲﾔﾚｽｼｽﾃﾑ研究所無線方式研究部超高周波回路研究ｸﾞﾙｰﾌﾟﾘｰﾀﾞ

1999-2002 NTTｴﾚｸﾄﾛﾆｸｽ株式会社(出向) 超高速ｴﾚｸﾄﾛﾆｸｽ事業本部営業部長

2002-2005 ﾌｫﾄﾆｸｽ研究所ﾃﾗﾋﾞｯﾄﾃﾞﾊﾞｲｽ研究部部長

2005-現在東京理科大学工学部電気工学科教授

教育歴

1999-2004 熊本大学大学院自然科学研究科連携講座客員教授

2003 山口大学電気電子工学科非常勤講師

2004 埼玉大学非常勤講師

2004 名古屋大学大学院工学研究科非常勤講師

2005 東京理科大学工学部電気工学科教授

【研究業績一覧（1980-2005）】

学位論文

“ミリ波平面集積回路の研究,”　March 1983.

学術論文・ﾌﾟﾛｼｰﾃﾞｨﾝｸﾞｽ（総数 107件、学術論文 63件、ﾌﾟﾛｼｰﾃﾞｨﾝｸﾞｽ 44件）

1. Naito, Y., Muraguchi, M., Tsuji, A., “A New Type Circulator for Millimeter Integrated Circuits,” 1980 MTT-S International Microwave Symposium Digest, Volume 80, Issue 1, May 1980, Page(s):250 – 252.

2. 村口正弘, 内藤喜之, “ミリ波集積回路用開放形非相反素子の一検討”,電子通信学会論文誌, Vol.J64-B, No.7, pp.605-611, 1981.

3. M. Muraguchi, K. Araki, and Y. Naito, “A new type of isolator for millimeter-wave integrated circuits using a nonreciprocal traveling-wave resonator,” IEEE Trans. Microwave Theory Tech., Vol.30, No.11, pp.1867-1873, 1982.

4. M. Muraguchi, T. Yukitake, and Y. Naito, “Optimum design of 3-dB branch-line couplers using microstrip lines,” IEEE Trans. Microwave Theory Tech., Vol.31, No.8, pp.674-678, 1983.

5. M. Muraguchi, T. Enoki, K. Yamasaki, and K. Ohwada, “A 20GHz Band monolithic low noise amplifier using GaAs ADVANCED SAINT-FET”, IEICE Trans., Vol.E 69, No.4, pp.326-328, 1986.

6. M. Muraguchi, T. Enoki, K. Ymasaki, and K. Ohwada, “A GaAs Advanced SAINT-FET with Asymmetric N+ Layers and Its Application to a 20 GHz Band Five-stage Monolithic Low Noise Amplifier,” Extended Abstracts of 1986 International Conference on Solid State Devices and Materials, pp.379-382, Tokyo, 1986.

7. M. Muraguchi and K. Ohwada, “A Ku-band monolithic voltage controlled oscillator,” IEICE Trans., Vol.E 70, No.4, pp.261-263, 1987.

8. K. Osafune, T. Enoki, M. Muraguchi, and K. Ohwada, “20GHz dynamic frequency divider with GaAs advanced SAINT and air-bridge technology,” Electron. Lett., vol.23, No.6, pp. 300-302, 1987.

9. Y. K. Fukai, and M. Muraguchi, “New method for measuring carrier concentration profile near a GaAs surface through a network analyzer,” IEEE Electron Device Lett., Vol.9, No.2,pp. 74-76, 1988.

10. M. Muraguchi, T. Hirota, A. Minakawa, and Y. Imai, “Uniplanar MMICs and their applications, ” NTT, Review of the ECL, Vol.36, No.6, pp.525-530, 1988.

11. T. Enoki, K. Yamasaki, M. Muraguchi, and K. Ohwada, “Asymmetric N⁺-layer 0.3μm SAINT FETs for ultra high frequency GaAs MMICs, ” NTT, Review of the ECL, Vol.36, No.6, pp.517-524, 1988.

12. 村口, 広田, 皆川, 今井, “ユニプレーナ型MMICとその応用,” NTT 研究実用化報告, Vol.37, No.11, pp.669-676, 1988.

13. 榎木, 山崎, 村口, 大和田, “超高周波GaAs MMIC用非対称 N⁺構造SAINT FET,” NTT 研究実用化報告, Vol.37, No.11, pp.659-667, 1988.

14. Muraguchi, M., Hirota, T., Minakawa, A., Ohwada, K., Sugeta, T., “Uniplanar MMICs and their applications,” 1988 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, Digest of Papers., 24-25 May 1988 Page(s):75 – 78.

15. Hirota, T., Muraguchi, M., Minakawa, A., Osafune, K., “A uni-planar MMIC 26-GHz-band receiver,” 1988 IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest, 6-9 Nov. 1988 Page(s):185 – 188.

16. M. Muraguchi, T. Hirota, A. Minakawa, K. Ohwada, and T. Sugeta, “Uniplanar MMICs and their applications,” IEEE Trans. Microwave Theory Tech., Vol.36, No.12, pp.1896-1901,1988.

17. Tomimuro, H., Ishitsuka, F., Sato, N., Muraguchi, M., “A new packaging technology for GaAs MMIC modules,” 1989 IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, Technical Digest, 22-25 Oct. 1989 Page(s):307 – 310.

18. Ohira, T., Muraguchi, M., Hirota, T., Osafune, K., Ino, M., “A Ku-band MMIC PLL frequency synthesizer,” 1989 IEEE MTT-S International Microwave Symposium Digest, 13-15 June 1989 Page(s):1047 - 1050 vol.3.

19. T. Hirota, M. Muraguchi, and A. Minakawa, “Reduced-size branch-line and rat-race hybrids for uniplanar MMICs,” IEEE Trans. Microwave Theory Tech., Vol.38, No.3, pp.270-275, 1990.

20. 長船, 村口, 広田, 菊池, 大平, “マイクロ波帯PLL用超高速モノリシックプリスケーラ,” 電子情報通信学会論文誌, C-II, Vol.J73-C-II, No.8, pp.480-485, 1990.

21. T. Ohira, M. Muraguchi, T. Hirota, K. Osafune, and M. Ino, “Dual-chip GaAs monolithic integration Ku-band phase-locked-loop microwave synthesizer,” IEEE Trans. Microwave Theory Tech., Vol.38, No.9, pp.1204-1209, 1990.

22. Hirota, T., Muraguchi, M., “A K-band single-chip transmitter,” 1990 IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, Technical Digest, 7-10 Oct. 1990 Page(s):275 – 278.

23. Muraguchi, M., Hirota, T., Minikawa, A., Imai, Y., Ishitsuka, F., Ogawa, H., “26 GHz-band full MMIC transmitters and receivers using a uniplanar technique,” 1990 IEEE MTT-S International Microwave Symposium Digest, 8-10 May 1990 Page(s):873 - 876 vol.2.

24. M. Muraguchi, T. Hirota, and F. Ishitsuka, “26 GHz-band full MMIC T/R modules using a uniplanar technique,” NTT Review, Vol.3, No.4, pp.82-88, 1991.

25. H. Tomimuro, F. Ishitsuka, N. Sato, and M. Muraguchi, “A new packaging technology for GaAs MMIC modules,” IEICE Trans., Vol.E 74, No.5, pp.1209-1213, 1991.

26. Muraguchi, M., Aikawa, M., “A linear limiter: a 11-GHz monolithic low distortion variable gain amplifier,” 1991 IEEE MTT-S International Microwave Symposium Digest, 10-14 June 1991 Page(s):525 - 528 vol.2.

27. Hirota, T., Muraguchi, M., “K-band frequency up-converters using reduced-size couplers and dividers,” 1991 IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, Technical Digest, 20-23 Oct. 1991 Page(s):53 – 56.

28. Yamauchi, Y., Kamitsuna, H., Muraguchi, M., Osafune, K., “A 15-GHz monolithic low phase noise VCO using AlGaAs/GaAs HBT,” 1991 IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, Technical Digest, 20-23 Oct. 1991 Page(s):259 – 262.

29. M. Muraguchi, and H. Kamitsuna, “K- and C-Band Low Phase Noise MMIC VCOs Using a Linear Varactor,” in Proc. Of 22nd European Microwave, pp.718-723, Helsinki, August 1992.

30. Y. Yamauchi, H. Kamitsuna, M. Nakatsugawa, H. Itoh, M. Muraguchi, and K. Osafune, “A 15-GHz monolithic low-phase-noise VCO using AlGaAs/GaAs HBT technology,” IEEE Journal of Solid-State Circuits, vol.27, No.10, pp. 1444-1447, 1992.

31. M. Aikawa, N. Imai, T. Tokumitsu, and M. Muraguchi, “MMIC technology for communication systems,” CNET and PPUR, Annals of telecommunications, vol.47, No.11-12, pp. 469-477, 1992.

32. 相川, 村口, “MMIC技術の研究開発,” NTT R&D, Vol. 42, No.1, pp. 1-8, 1993.

33. 洲脇, 中川, 村口, 大平, “MMIC局部発振器の低位相雑音化技術,” NTT R&D, Vol. 42, No.1, pp. 19-26, 1993.

34. Y. Matsuoka, S. Yamahata, M. Nakatsugawa, M. Muraguchi, and T. Ishibashi, “High-efficiency operation of AlGaAs/GaAs power heterojunction bipolar transistors at low collector supply voltage,” Electron. Lett., vol.29, No.11, pp. 982-984, 1993.

35. Muraguchi, M., Nakatsugawa, M., Aikawa, M., “A novel MMIC power amplifier for pocket-size cellular telephones,” 1993 IEEE MTT-S International Microwave Symposium Digest, 14-18 June 1993 Page(s):793 - 796 vol.2.

36. Nakatsugawa, M., Yamaguchi, Y., Muraguchi, M., “An L-band ultra low power consumption monolithic low noise amplifier [for mobile communication],” 1993 IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, Technical Digest 1993., 10-13 Oct. 1993 Page(s):45 – 48.

37. Tsukahara, T., Ishikawa, M., Muraguchi, M., “A 2 V 2 GHz Si-bipolar direct-conversion quadrature modulator,” 1994 IEEE International Solid-State Circuits Conference, Digest of 1994 ISSCC Technical Papers, 16-18 Feb. 1994 Page(s):40 – 41.

38. Muraguchi, M., Tsukahara, T., Nakatsugawa, M., Yamaguchi, Y., Tokumitsu, T., “1.9 GHz-band low voltage and low power consumption RF IC chip-set for personal communications,” 1994 IEEE 44th Vehicular Technology Conference, 8-10 June 1994 Page(s):504 - 507 vol.1.

39. M. Nakatsugawa, Y. Yamaguchi, and M. Muraguchi, “An L-band ultra-low-power monolithic low-noise amplifier,” IEEE Trans. Microwave Theory Tech., Vol.43, No.7, pp.1745-1750, 1995.

40. Yamaguchi, Y., Muraguchi, M., Nakagawa, T., Nakatsugawa, M., Tsukahara, T., “A novel linearizing technique for GaAs power amplifiers,” 1995 IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, Technical Digest 1995, 29 Oct.-1 Nov. 1995 Page(s):288 – 291.

41. Aikawa, M., Muraguchi, M., “MMICs for mobile/personal communications applications,” 1995 URSI International Symposium on Signals, Systems, and Electronics, ISSSE '95, Proceedings., 25-27 Oct. 1995 Page(s):25 – 28.

42. Muraguchi, M., Nakatsugawa, M., Hayashi, H., Aikawa, M., “A 1.9 GHz-band ultra low power consumption amplifier chip set for personal communications,” 1995 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, Digest of Papers., 15-16 May 1995 Page(s):145 – 148.

43. Muraguchi, M., Nakatsugawa, M., Hayashi, H., Aikawa, M., “A 1.9 GHz-band ultra low power consumption amplifier chip set for personal communications,” 1995 IEEE MTT-S International Microwave Symposium Digest, 16-20 May 1995 Page(s):9 - 12 vol.1.

44. 村口, 束原, “PHS用高周波回路技術,” NTT R&D, Vol. 44, No.9, pp. 781-786, 1995.

45. M. Muraguchi and M. Aikawa, “Microwave Components for Cellular Portable Radiotelephone,” Elsevier Sci. Ltd., Solid State Electronics, vol.38, No.9, pp. 1551-1557, 1995.

46. H. Hayashi, M. Nakatsugawa, and M. Muraguchi, “Quasi-linear amplification using self phase distortion compensation technique,” IEEE Trans. Microwave Theory Tech., vol. 43, no. 11, pp. 2557-2564, 1995.

47. T. Tsukahara, M. Ishikawa, and M. Muraguchi, “A 2V 2GHz Si-bipolar direct-conversion quadrature modulator,” IEEE Journal of Solid-State Circuits, vol.31, No.2, pp. 263-267, 1996.

48. 村口, 山口, 林, 束原, 山岸, “高速無線LAN用MMICの開発,” NTT R&D, Vol. 45, No.8, pp. 807-814, 1996.

49. Hayashi, H., Muraguchi, M., Umeda, Y., Enoki, T.,” A novel loss compensation technique for high-Q broad-band active inductors,” 1996 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, Digest of Papers, 16-18 June 1996 Page(s):103 – 106.

50. Hayashi, H., Nakatsugawa, M., Nakagawa, T., Muraguchi, M., “novel optical control technique using tunable inductance circuits,” 1996 IEEE International Topical Meeting on Microwave Photonics (MWP '96), Technical Digest., 3-5 Dec. 1996 Page(s):277 – 280.

51. H. Hayashi, M. Muraguchi, Y. Umeda, and T. Enoki, “A high-Q broad-band active inductor and its application to a low-loss analog phase shifter,” IEEE Trans. Microwave Theory Tech., vol. 44, no. 12, pp. 2369-2374, 1996.

52. M. Nakatsugawa and M. Muraguchi, “Quasi-transmission-line variable reactance circuits for a wide variable-phase range monolithic phase shifter,” IEICE Trans. Electron., Vol.E80-C, No.1, pp.168-173, 1997.

53. T. Tsukahara, T. Nakagawa and M. Muraguchi, “A 2.7-V quasi-microwave Si-bipolar quadrature modulator without tuning,” IEICE Trans. Electron., Vol.E80-A, No.2, pp.349-352, 1997.

54. H. Hayashi and M. Muraguchi, “A low distortion technique for reducing transmitter intermodulation,” IEICE Trans. Electron., Vol.E80-C, No.6, pp.768-774, 1997.

55. Hayashi, H., Okazaki, H., Kanda, A., Hirota, T., Muraguchi, M., “A novel power combining configuration without using an isolator,” 1997 IEEE Topical Symposium on Millimeter Waves, 7-8 July 1997 Page(s):89 – 92.

56. Nakatsugawa, M., Kanda, A., Okazaki, H., Nishikawa, K., Muraguchi, M., “Line-loss and size-reduction techniques for millimeter-wave RF front-end boards by using a polyimide/aluminaceramic multilayer configuration,” 1997 IEEE MTT-S International Microwave Symposium Digest, Volume 2, 8-13 June 1997 Page(s):509 - 512 vol.2.

57. Kanda, A., Kodama, S., Furuta, T., Nittono, T., Ishibashi, T., Muraguchi, M., “High-performance 19 GHz-band GaAs FET switches using LOXI (Layered-Oxide-Isolation)-MESFETs,” 1997 IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, Technical Digest 1997, 12-15 Oct. 1997 Page(s):62 – 65.

58. M. Nakatsugawa, A. Kanda, H. Okazaki, K. Nishikawa, and M. Muraguchi, “Line-loss and size-reduction techniques for millimeter-wave RF front-end boards by using a polyimide/alumina-ceramic multilayer configuration,” IEEE Trans. Microwave Theory Tech., vol. 45, no. 12, pp.2308-2315, 1997.

59. H. Nakajima and M. Muraguchi, “Dual-frequency matching technique and its application to an octave-band (30-60 GHz) MMIC amplifier,” IEICE Trans. on Electronics E80-C, no. 12, pp.1614-1621, 1997.

60. H. Hayashi and M. Muraguchi, “An IF-band MMIC chip set for high-speed wireless communication systems,” IEICE Trans. on Electronics E81-C, no. 1, pp.63-69, 1998.

61. H. Hayashi and M. Muraguchi, “An MMIC variable-gain amplifier using a cascode-connected FET with constant phase deviation,” IEICE Trans. on Electronics E81-C, no. 1, pp.70-77, 1998.

62. H. Hayashi and M. Muraguchi, “A novel broad-band MMIC VCO using an active inductor,” IEICE Trans. on Fundamentals E81-A, no. 2, pp.224-229, 1998.

63. H. Hayashi, M. Nakatsugawa, T. Nakagawa and M. Muraguchi, “A novel optical control technique using tunable inductance circuits,” IEICE Trans. on Electronics E81-C, no. 2, pp.299-304, 1998.

64. S. Kodama, T. Furuta, A. Kanda, M. Muraguchi, H. Ito, and T. Ishibashi, “Layered-oxide-isolation (LOXI) metal-semiconductor field effect transistor (MESFET) for low parasitic source-drain capacitance,” Japan Journal of Applied Physics, vol. 37, no. 2B, pp.L209-L211, 1998.

65. H. Okazaki, T. Nakagawa, M. Muraguchi, H. Fukuyama, K. Maezawa, and M. Yamamoto, “Sampling phase detector using a resonant tunneling high electron mobility transistor for microwave phase-locked oscillators,” IEEE Trans. on VLSI Systems, vol. 6, no. 1, pp.39-42, 1998.

66. H. Hayashi, H. Okazaki, A. Kanda, T. Hirota, and M. Muraguchi, “Millimeter-wave–band amplifier and mixer MMIC’s using a broad-band 45°power divider/combiner,” IEEE Trans. Microwave Theory Tech., vol. 46, no. 6, pp.811-819, 1998.

67. H. Hayashi and M. Muraguchi, “A polyimide/alumina-ceramic multilayer MIC analog phase shifter with a large phase shift,” IEICE Trans. on Electronics E81-C, no. 6, pp.841-847, 1998.

68. Y. Yamaguchi, M. Muraguchi, T. Nakagawa, and M. Nakatsugawa, “A high-efficiency linear power amplifier with a novel output power control technique,” IEICE Trans. on Electronics E81-C, no. 6, pp.892-897, 1998.

69. Matsumoto, S., Ishiyama, T., Hiraoka, Y., Sakai, T., Yachi, T., Kamitsuna, H., Muraguchi, M., “A novel high-frequency quasi-SOI power MOSFET for multi-gigahertz applications,” 1998 IEEE International Electron Devices Meeting (IEDM '98), Technical Digest, 6-9 Dec. 1998 Page(s):945 – 948.

70. Hayashi, K., Muraguchi, M., “An MMIC active phase shifter using a variable resonant circuit,” Microwave Symposium Digest, 1998 IEEE MTT-S International, Volume 3, 7-12 June 1998 Page(s):1573 - 1576 vol.3.

71. Yamagishi, A., Muraguchi, M., Tsukahara, T., “A 85 Mbps low-power DQPSK modem-LSI for advanced wireless access,” 1998 IEEE Radio and Wireless Conference (RAWCON 98), 9-12 Aug. 1998 Page(s):129 – 132.

72. Hyashi, H., Muraguchi, M., “IF-band MMICs for high-speed wireless signal processing,” 1998 IEEE MTT-S International Microwave Symposium Digest, Volume 1, 7-12 June 1998 Page(s):89 - 92 vol.1.

73. Hayashi, H., Muraguchi, M., “IF-band MMICs for high-speed wireless signal processing,” 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 7-9 June 1998 Page(s):257 – 260.

74. H. Fukuyama, K. Maezawa, M. Yamamoto, H. Okazaki and M. Muraguchi, “Large-signal microwave characteristics of resonant-tunneling high electron mobility transistors,” IEEE Trans. on Electron Devices, vol. 46, no. 2, pp.281-287, 1999.

75. H. Hayashi, M. Nakatsugawa, T. Nakagawa and M. Muraguchi, “A novel distortion compensation technique using an active inductor,” IEICE Trans. on Electronics E82-C, no. 5, pp.687-691, 1999.

76. H. Hayashi and M. Muraguchi, “A novel broad-band MMIC VCO using active inductor,” Kluwer Academic Publishers, Analog Integrated Circuits and Signal Processing, vol. 20, no. 2, pp.103-109, Aug. 1999.

77. Yamagishi, A., Nosaka, H., Muraguchi, M., Tsukahara, T., “A phase interpolation direct digital synthesizer with an adaptive integrator,” 1999 IEEE Radio and Wireless Conference (RAWCON 99), 1-4 Aug. 1999 Page(s):289 – 292.

78. Yamaguchi, Y., Nosaka, H., Muraguchi, M., Yamagishi, A., “A very low spurious frequency doubler module for local oscillators,” 1999 IEEE Radio and Wireless Conference (RAWCON 99), 1-4 Aug. 1999 Page(s):293 – 296.

79. Matsumoto, S., Hiraoka, Y., Yachi, T., Kosugi, T., Kamitsuna, H., Muraguchi, M., “Impact of the SOI Substrate Parameters on the Radio-frequency Performance of the Quasi-SOI Power MOSFET,” 1999. Proceeding of the 29th European Solid-State Device Research Conference, Volume 1, 13-15 September 1999 Page(s):528 – 531.

80. Hayashi, H., Muraguchi, M., “A miniaturized MMIC analog phase shifter using two quarter-wave-length transmission lines,” 1999 IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 17-20 Oct. 1999 Page(s):255 – 258.

81. H. Hayashi and M. Muraguchi, “An MMIC active phase shifter using a variable resonant circuit,” IEEE Trans. Microwave Theory Tech., vol. 47, no. 10, pp.2021-2026, 1999.

82. M. Muraguchi, “RF device trends for mobile communications,” Elsevier Sci. Ltd., Solid State Electronics, vol.43, pp. 1591-1598, 1999.

83. H. Nosaka, Y. Yamaguchi, and M. Muraguchi, “A wide-bandwidth-output direct digital synthesizer with multiple delay generators,” Japan Journal of Applied Physics, vol. 39, no. 4B, pp.2268-2272, 2000.

84. S. Kodama, T. Furuta, N. Watanabe, H. Ito, A. Kanda, M. Muraguchi, and T. Ishibashi, “Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique,” Japanese Journal of Applied Physics, vol. 39, no. 4B, pp.2435-2438, 2000.

85. M. Kawashima, H. Hayashi, H. Fukuyama, H. Okazaki, H. Matsuzaki, and M. Muraguchi, “A monolithic microwave-integrated circuit doubler using a resonant-tunneling high-electron-mobility transistor,” Japanese Journal of Applied Physics, vol. 39, no. 4B, pp.2468-2472, 2000.

86. Yamagishi, H. Nosaka, M. Muraguchi, and T. Tsukahara, “A Phase-Interpolation Direct Digital Synthesizer with an Adaptive Integrator,” IEEE Trans. Microwave Theory Tech., vol. 48, no. 6, pp.905-909, 2000.

87. Kamogawa, K., Nishikawa, K., Toyoda, I., Tokumitsu, M., Hirano, M., Nakagawa, T., Muraguchi, M., “New methodology for microwave/millimeter-wave MMIC development,” 2000 IEEE MTT-S International Microwave Symposium Digest, Volume 3, 11-16 June 2000 Page(s):1913 – 1916.

88. H. Nosaka, Y. Yamaguchi, and M. Muraguchi, “A Non-Binary Direct Digital Synthesizer with an Extended Phase Accumulator,” IEEE Trans. on Ultrasonic, Ferroelectrics, and Frequency Control, vol. 48, no. 1, pp.293-298, 2001.

89. S. Matsumoto, Y. Hiraoka, T. Sakai, T. Yachi, T. Ishiyama, T. Kosugi, H. Kamitsuna, and M. Muraguchi, “A Quasi-SOI Power MOSFET for Radio Frequency Applications Formed by Reversed Silicon Wafer Direct Bonding,” IEEE Trans. on Electron Devices, vol. 48, no. 7, pp.1448-1453, 2001.

90. H. Nosaka, Y. Yamaguchi, A. Yamagishi, H. Fukuyama, and M. Muraguchi, “A Low-Power Direct Digital Synthesizer Using a Self-Adjusting Phase-Interpolation Technique,” IEEE Journal of Solid-State Circuits, vol. 36, no. 8, pp.1281-1285, 2001.

91. H. Nosaka, Y. Yamaguchi, and M. Muraguchi, “Phase interpolation direct digital synthesizer with precise delay generator using two-step integration,” IEE Electronics Letters, vol. 37, no. 18, pp.1112-1113, 2001.

92. M. Nakatsugawa, M. Muraguchi. and Y. Yamaguchi, “A Highly Linearized MMIC Amplifier Using a Combination of a Newly Developed LD-FET and D-FET Simultaneously Fabricated with a Self-Alignment/Selective Ion-Implantation Process,” IEICE Trans. on Electronics E85-C, no. 12, pp.1981-1989, 2002.

93. H. Nosaka, Y. Yamaguchi, A. Yamagishi, and M. Muraguchi, “A Fractional Phase Interpolation Using Two-Step Integration for Frequency Multiplication and Direct Digital Synthesis,” IEICE Trans. on Electronics E86-A, no. 2, pp.304-312, 2003.

94. 山岸明洋, 束原恒夫, 村口正弘, “位相面の対称性を利用したROMによる位相検出方法とそれを用いた85Mbit/s DQPSK変復調LSI,” 電子通信学会論文誌, Vol.J86-C, No.8, pp.845-852, 2003.

95. Kosugi, T., Shibata, T., Enoki, T., Muraguchi, M., Hirata, A., Nagatsuma, T., Kyuragi, H., “A 120-GHz millimeter-wave MMIC chipset for future broadband wireless access applications,” 2003 IEEE MTT-S International Microwave Symposium Digest, Volume 1, 8-13 June 2003 Page(s):129 - 132 vol.1.

96. Fukai, Y.K., Sugitani, S., Enoki, T., Kitabayashi, H., Makimura, T., Yamane, Y., Muraguchi, M., “Bias acceleration model of drain resistance degradation in InP-based HEMTs,” 2003 IEEE International Reliability Physics Symposium Proceedings, 30 March-4 April 2003 Page(s):324 – 328.

97. Kosugi, T., Tokumitsu, M., Enoki, T., Muraguchi, M., Hirata, A., Nagatsuma, T., “120-GHz Tx/Rx chipset for 10-Gbit/s wireless applications using 0.1 /spl mu/m-gate InP HEMTs,” 2004 IEEE Compound Semiconductor Integrated Circuit Symposium, 24-27 Oct. 2004 Page(s):171 – 174.

98. Nosaka, H., Nakamura, M., Ida, M., Kurishima, K., Shibata, T., Tokumitsu, M., Muraguchi, M., “A 24-Gsps 3-bit Nyquist ADC using InP HBTs for electronic dispersion compensation,” 2004 IEEE MTT-S International Microwave Symposium Digest, Volume 1, 6-11 June 2004 Page(s):101 - 104 Vol.1.

99. Kamitsuna, H., Kitabayashi, H., Matsuzaki, H., Tokumitsu, M., Muraguchi, M., “A 10 Gbit/s switch matrix MMIC using InP HEMTs with a logic-level-independent interface,” 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Papers, 6-8 June 2004 Page(s):325 – 328.

100. Sano, K., Murata, K., Fukuyama, H., Tsunashima, S., Ishii, K., Kurishima, K., Matsuzaki, H., Enoki, T., Tokumitsu, M., Sugahara, H., Muraguchi, M., “InP-based optical system ICs operating at 40 Gbit/s and beyond,” 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Digest of Papers, 6-8 June 2004 Page(s):313 – 316.

101. Kamitsuna, H., Yamane, Y., Tokumitsu, M., Sugahara, H., Muraguchi, M., “A fast low-power 4/spl times/4 switch IC using InP HEMTs for 10-Gbit/s systems,” 2004 IEEE Compound Semiconductor Integrated Circuit Symposium, 24-27 Oct. 2004 Page(s):97 – 100.

102. H. Nosaka, E. Sano, K.Ishii, M. Ida, K. Kurishima, S. Yamahata, T. Shibata, H. Fukuyama, M. Yoneyama, T. Enoki, and M. Muraguchi, “A 39-to-45-Gbit/s Multi-Data-Rate Clock and Data Recovery Circuit with a Robust Lock Detector,” IEEE Journal of Solid-State Circuits, vol. 39, no. 8, pp.1361-1365, 2004.

103. H. Kamitsuna,Y. Yamane, M. Tokumitsu, H. Sugahara, M. Muraguchi, “40 Gbit/s/ch 2/spl times/2 switch IC using InP HEMTs,” IEE Electronics Letters, vol. 41, no. 2, pp.532-534, 2005.

104. H. Nosaka, M. Nakamura, K. Sano, M. Ida, K. Kurishima, T. Shibata, M. Tokumitsu, M. Muraguchi, “24-Gsps 3-Bit Nyquist ADC Using InP HBTs for DSP-Based Electronic Dispersion Compensation,” IEICE Trans. on Electronics, Vol.E88-C No.6, pp.1225-1232, 2005

105. Itoh, T., Fukuyama, H., Tsunashima, S., Yoshida, E., Yamabayashi, Y., Muraguchi, M., Toba, H., Sugahara, H., “1-km transmission of 10 Gbit/s optical signal over legacy MMF using mode limiting transmission and incoherent light source,” 2005 IEEE Optical Fiber Communication Conference, 2005 OFC/NFOEC Technical Digest, Volume 3, 6-11 March 2005 Page(s):3 pp. Vol. 3.

106. Kamitsuna, H., Yamane, Y., Tokumitsu, M., Sugahara, H., Muraguchi, M., “A miniaturized wideband 4x4 switch matrix ic using four inp-hemt sp4t switches,” 2005 IEEE MTT-S International Microwave Symposium Digest, 12-17 June 2005 Page(s):2015 – 2018.

107. H. Kamitsuna,Y. Yamane, M. Tokumitsu, H. Sugahara, M. Muraguchi, “Low-power InP-HEMT switch ICs integrating miniaturized 2/spl times/2 switches for 10-Gb/s systems,” IEEE Journal of Solid-State Circuits, vol. 41, no. 2, pp.452-460, 2006.

国際会議招待講演

1. M. Muraguchi, “Low Power Consumption and High-Efficiency MMICs for Mobile Communications,” Invited Speaker, 1993 Asia-Pacific Microwave Conference, Shinchu, Taiwan, Sept. 1993.

2. M. Muraguchi, “Microwave Components for Cellular Portable Radiotelephones,” Invited Speaker, Topical Workshop on Heterostructure Microelectronics, Shizuoka, May 1994.

3. M. Muraguchi, “Ultra Low Power RF IC Technologies for Compact Mobile Terminals,” Invited Speaker, The XXVth General Assembly of the International Union of Radio Science (URSI), Lille, France, Aug. 1996.

4. M. Muraguchi, “Trends in RF Devices and ICs for Wireless Application,” Short Course Lecturer, The 1997 IEEE International Electron Devices Meeting (IEDM), Dec. 1997, Washington DC.

5. M. Muraguchi, “RF device trends for mobile communications,” Invited Speaker, Topical Workshop on Heterostructure Microelectronics, Hayama-Machi, Kanagawa, Aug. 1998.

6. M. Muraguchi, “RF Device Trends for Wireless Applications,” Invited Speaker, Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials, pp.76-77, Hiroshima, Sep. 1998.

7. M. Muraguchi, “RF Device Trends for Wireless Communication Systems,” Plenary Session Speaker, The 25th International Symposium on Compound Semiconductors (ISCS), Oct. 1998, Nara, Japan.

8. M. Muraguchi, “RF IC Technologies for Wearable Terminals with Software Radios,” Invited Speaker, The XXVIth General Assembly of the International Union of Radio Science (URSI), Toronto, Canada, Aug. 1999.

9. M. Muraguchi, “RF IC Technologies for Wearable Terminals with Software Radios,” keynote Speaker, Microwave and Millimeter-wave Workshop 2000, Seoul, Korea, Oct. 2000.

最近の国内講演

1. 村口正弘, “無線・光通信システムにおける化合物半導体デバイスの役割,” 電子情報通信学会, 2005年総合大会, チュートリアル講演CT-1-1, Mar. 2005.

2. 村口正弘, “化合物半導体は勝ち残れるか,” 新機能素子研究開発協会(FED), 2003年度新機能素子シンポジウム　–IT基盤研究開発-, Oct. 2003.

3. 村口正弘, “通信システムにおける化合物半導体デバイスの真の実力,” 早稲田大学, 早稲田大学材料技術研究所オープンセミナー, テーマ「化合物半導体・21世紀の展望」, Nov. 2000.

4. 村口正弘, “多層セラミック/多層ポリイミド３次元実装技術,” 電子情報通信学会, 1999年総合大会, チュートリアル講演TC-1-4, Mar. 1999.

5. 村口正弘, “ワイヤレス通信における高周波デバイス回路技術,” 電子情報通信学会, 1998年応用物理学関連連合講演会（春季）, シンポジウム講演28 a-YK-2, Mar. 1998.

6. 村口正弘, “次世代ワイヤレス通信に向けた回路・デバイス技術,” 電子情報通信学会, 1997年総合大会, シンポジウム講演SC-10-2, Mar. 1997.

7. 村口正弘, “RF帯マルチチップモジュール(MCM)の展望,” 電子情報通信学会, 1996年総合大会, パネル討論PC-1-1, Mar. 1996.

8. 村口正弘, “マイクロ波増幅器設計の基礎,” 電子情報通信学会, 1997 Microwave Workshop and Exhibition (MWE’97), 基礎講座, Dec. 1996.

上記以外の自身の発表件数は約30件

共著の件数は約80件

著書

1. 移動通信ハンドブック,（株）オーム社, 1995.（１節程度）

2. パーソナル通信システムとその展開,（株）科学新聞社, 1995. （１節程度）

3. モノリシックマイクロ波集積回路(MMIC), 電子情報通信学会, 1997.

4. Broadband Wireless Communications, Springer-Verlag London Limited, 1998. （１節程度）

5. Trends in RF Devices for Wireless Application, Y.K. Chen, Robert Brodersen, Paul Davis, Masahiro Muraguchi, Eric Strid 共著, IEEE Press, 1998.

6. 次世代超高速光通信技術,（株）技術情報協会, 2003. （１節程度）

保有成立特許

01.　特許番号　第1826249号　1994　高周波電力増幅装置

02.　特許番号　第1954791号　1994　コプレーナ線路-同軸線路モード変換装置

03.　特許番号　第2116272号　1996　可変利得増幅器

04.　特許番号　第2522649号　1996　超高速集積回路

05.　特許番号　第2527781号　1996　超高速分周回路

06.　特許番号　第2571832号　1997　高速・高周波集積回路用パッケージ

07.　特許番号　第2597645号　1997　高周波電力分配／合成回路

08.　特許番号　第2603310号　1997　高周波集積回路用パッケージ

09.　特許番号　第2669066号　1997　インピーダンス変換回路

10.　United States Patent #5606738 1997 Frequency Conversion Circuit with Linear

Feedback

11.　特許番号　第2793856号　1998　電圧制御発振器　

12.　特許番号　第3051430号　2000　マイクロ波集積回路　

13.　特許番号　第3131931号　2001　高周波高出力増幅装置　

14.　特許番号　第3204481号　2001　能動インダクタ　

15.　特許番号　第3213873号　2001　電圧制御発振器　

16.　特許番号　第3216686号　2001　移相器　

17.　特許番号　第3216687号　2001　移相器　

18.　特許番号　第3216693号　2001　能動インダクタ　

19.　特許番号　第3250693号　2002　出力切替増幅装置

20.　特許番号　第3287656号　2002　低歪低雑音増幅器　

21.　特許番号　第3289464号　2002　高周波高出力トランジスタ　

22.　特許番号　第3292344号　2002　電力増幅装置　

23.　特許番号　第3301032号　2002　可変移相器

24.　特許番号　第3373435号　2003　抵抗帰還トランジスタ

25.　特許番号　第3393514号　2003　モノリシック集積化低位相歪電力増幅器

26.　特許番号　第3393517号　2003　モノリシック集積化低位相歪電力増幅器

27.　特許番号　第3393518号　2003　モノリシック集積化低位相歪電力増幅器

28.　特許番号　第3395068号　2003　モノリシック集積化FET電力増幅器

29.　特許番号　第3403041号　2003　絶縁ゲート型電界効果トランジスタ

30.　特許番号　第3471197号　2003　高周波回路　

31.　特許番号　第3502302号　2004　周波数シンセサイザ　

32.　特許番号　第3505644号　2004　ダイレクト・デジタル・シンセサイザ　

33.　特許番号　第3517777号　2004　線形高出力増幅装置

34.　特許番号　第3532490号　2004　ロック検出器及びそれを用いた位相同期回路

35.　特許番号　第3548850号　2004　逓倍器

36.　特許番号　第3562715号　2004　クロック再生回路

37.　特許番号　第3572573号　2004　遅延発生器

38.　特許番号　第3578943号　2004　遅延発生器ならびにその遅延発生器を用いた周波数シンセサイザおよび逓倍器

39.　特許番号　第3588018号　2004　信号分配器

40.　特許番号　第3588019号　2004　移相器

41.　特許番号　第3690735号　2005　位相同期回路

上記以外に出願のみ約40件

受賞歴

1987日本電信電話㈱ LSI研究所長表彰研究開発賞

1988日本電信電話㈱研究開発本部長表彰研究開発賞

1988日本電信電話㈱無線システム研究所長表彰研究開発賞

1990日本電信電話㈱社長表彰研究開発賞

1993日本電信電話㈱研究開発本部長表彰業績賞(特許戦略)

1994 第26回市村学術賞（功績賞）

2006 電子情報通信学会ｴﾚｸﾄﾛﾆｸｽｿｻｲｴﾃｨ功労感謝状

学外活動

[国家プロジェクト関連]

新機能素子研究開発協会(FED)「ﾜｲﾔﾚｽﾃﾞﾊﾞｲｽ研究開発戦略委員会」委員 (2003-現在)

新ｴﾈﾙｷﾞｰ・産業技術総合開発機構(NEDO)「電子・情報技術戦略調査委員会（ﾈｯﾄﾜｰｸ技術戦略検討ＷＧ）」委員 (2004-現在)

新機能素子研究開発協会(FED)「超高周波ﾃﾞﾊﾞｲｽ､無線ｼｽﾃﾑ利用技術調査研究会」委員 (2000)

ﾆｭｰﾀﾞｲｱﾓﾝﾄﾞﾌｫｰﾗﾑ「平成15年度ﾀﾞｲｱﾓﾝﾄﾞ極限機能ﾌﾟﾛｼﾞｪｸﾄ-新用途・市場の調査」委員（2003）

[IEEE関連]

IEEE Transaction on Microwave Theory and Techniques, EDITORIAL BORD MEMBER（1993-現在）

IEEE Wireless Communication Conference論文委員会委員（1997）

IEEE Radio & Wireless Conference (RAWCON) 論文委員会委員（1998-1999）

[電子情報通信学会関連]

電子情報通信学会国際委員会委員 (2005-現在)

電子情報通信学会ｴﾚｸﾄﾛﾆｸｽｿｻｲｴﾃｨ副会長 (2005-現在)

電子情報通信学会マイクロ波研究専門委員会委員 (1998-現在)

電子情報通信学会 APMC2006 論文委員会副委員長 (2005-現在)

電子情報通信学会英論文誌編集委員(1994-1998)

電子情報通信学会ｴﾚｸﾄﾛﾆｸｽｿｻｲｴﾃｨ大会幹事 (1999)

電子情報通信学会ｴﾚｸﾄﾛﾆｸｽｿｻｲｴﾃｨ大会委員長 (2000)

電子情報通信学会ｴﾚｸﾄﾛﾆｸｽｿｻｲｴﾃｨ学術奨励賞選定委員会幹事 (1999)

電子情報通信学会ｴﾚｸﾄﾛﾆｸｽｿｻｲｴﾃｨ学術奨励賞選定委員会委員長 (2000)

電子情報通信学会マイクロ波研究専門委員会幹事 (2000-2002)

電子情報通信学会 APMC1994 実行委員（1994）

電子情報通信学会 APMC1998 論文委員会副委員長（1998）

電子情報通信学会 APMC2002 論文委員会副委員長（2002）

電子情報通信学会 APMC国内委員会庶務幹事（2000-2005）

電子情報通信学会 MWE1993 実行委員（1993）

電子情報通信学会 MWE1995 論文委員会副委員長（1995）

電子情報通信学会 MWE1996 論文委員会副委員長（1996）

電子情報通信学会 MWE1997 論文委員会副委員長（1997）

電子情報通信学会 MWE2003 総務委員会委員長（2003）

電子情報通信学会 MWE2004 論文委員会委員長（2004）

電子情報通信学会 MWE2005 財務委員会委員長（2005）

APMC: Asia-Pacific Microwave Conference

MWE: Microwave Workshops and Exhibition

[URSI関連]

日本学術会議電波科学研究連絡委員会Ｃ分科会幹事 (1996-2000)

アジア・太平洋電波科学会議(AP-RASC'01) 論文委員会委員 (2001)

ISSSE'01実行委員、論文委員 (2001)

ISSSE: International Symposium on Signals, Systems, and Electronics

[応用物理学会関連]

応用物理学会SSDM1999 論文委員会委員 (1999)

応用物理学会SSDM2000 論文委員会委員 (2000)
　　 SSDM: Solid State Device and Materials

[電気学会関連]

電気学会調査専門委員会「ミリ波技術とそのインテグレーションと展開」幹事 (1999-2000 )