すべて ScAlN NbN Sputter GaN AlN InN InGaN AlGaN FET Diode LED Polarity Oxide

2025

Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures

T. Okuda, S. Ota, T. Kawahara, K. Makiyama, K. Nakata, T. Maeda, A. Kobayashi

Applied Physics Letters 126, 052105 (2025).

DOI: 10.1063/5.0228924

Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics

A. Kobayashi, T. Maeda, T. Akiyama, T. Kawamura, Y. Honda

Physica Status Solidi A 2400896 (2025).

DOI: 10.1002/pssa.202400896

2024

Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering

A. Kobayashi, Y. Honda, T. Maeda, T. Okuda, K. Ueno, H. Fujioka

Applied Physics Express 17, 011002 (2024).

DOI: 10.35848/1882-0786/ad120b

Structural and optical properties of epitaxial Sc_xAl_1−xN coherently grown on GaN bulk substrates by sputtering method

T. Maeda, Y. Wakamoto, S. Kaneki, H. Fujikura, A. Kobayashi

Applied Physics Letters 125, 022103 (2024).

DOI: 10.1063/5.0213662

Hole Conduction Mechanism in In–Mg-Codoped GaN Prepared via Pulsed Sputtering Deposition

A. Naito, K. Ueno, A. Kobayashi, H. Fujioka

Physica Status Solidi A 221, 2300806 (2024).

DOI: 10.1002/pssa.202300806

Temperature‐Dependent Characteristics of AlN/Al_0.5Ga_0.5N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts

R. Maeda, K. Ueno, A. Kobayashi, H. Fujioka

Physica Status Solidi A 2300848 (2024).

DOI: 10.1002/pssa.202300848

2023

Epitaxial Junction of Inversion Symmetry Breaking AlN and Centrosymmetric NbN: A Polarity Control of Wide-Bandgap AlN

A. Kobayashi, S. Kihira, T. Akiyama, T. Kawamura, T. Maeda, K. Ueno, H. Fujioka

ACS Applied Electronic Materials 5, 240 (2023).

DOI: 10.1021/acsaelm.2c01288

Electrical properties of N-polar Si-doped GaN prepared by pulsed sputtering

K. Ueno, Y. Masuda, A. Kobayashi, H. Fujioka

Applied Physics Express 16, 011002 (2023).

DOI: 10.35848/1882-0786/acb2b1

Positive impurity size effect in degenerate Sn-doped GaN prepared by pulsed sputtering

Y. Nishikawa, K. Ueno, A. Kobayashi, H. Fujioka

Applied Physics Letters 122, 082102 (2023).

DOI: 10.1063/5.0118126

Preparation of degenerate n-type Al_xGa_1−xN (0 < x ≤ 0.81) with record low resistivity by pulsed sputtering deposition

Y. Nishikawa, K. Ueno, A. Kobayashi, H. Fujioka

Applied Physics Letters 122, 232102 (2023).

DOI: 10.1063/5.0144418

2022

Crystal-Phase Controlled Epitaxial Growth of NbN_x Superconductors on Wide-Bandgap AlN Semiconductors

A. Kobayashi, S. Kihira, T. Takeda, M. Kobayashi, T. Harada, K. Ueno, H. Fujioka

Advanced Materials Interfaces 9, 2201244 (2022).

DOI: 10.1002/admi.202201244

AlN/Al_0.5Ga_0.5N HEMTs with heavily Si-doped degenerate GaN contacts prepared via pulsed sputtering

R. Maeda, K. Ueno, A. Kobayashi, H. Fujioka

Applied Physics Express 15, 031002 (2022).

DOI: 10.35848/1882-0786/ac4fcf

Schottky barrier height engineering in vertical p-type GaN Schottky barrier diodes for high-temperature operation up to 800 K

K. Aoyama, K. Ueno, A. Kobayashi, H. Fujioka

Applied Physics Letters 121, 232103 (2022).

DOI: 10.1063/5.0123299

Reduction of Twin Boundary in NbN Films Grown on Annealed AlN

S. Kihira, A. Kobayashi, K. Ueno, H. Fujioka

Crystal Growth & Design 22, 1720 (2022).

DOI: 10.1021/acs.cgd.1c01287

2021

Pulsed sputtering growth of heavily Si-doped GaN (20-21) for tunneling junction contacts on semipolar InGaN (20-21) LEDs

S. Morikawa, K. Ueno, A. Kobayashi, H. Fujioka

Applied Physics Express 14, 051011 (2021).

DOI: 10.35848/1882-0786/abf669

Vertical p-type GaN Schottky barrier diodes with nearly ideal thermionic emission characteristics

K. Ueno, K. Shibahara, A. Kobayashi, H. Fujioka

Applied Physics Letters 118, 022102 (2021).

DOI: 10.1063/5.0036093

Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes

T. Fudetani, K. Ueno, A. Kobayashi, H. Fujioka

Applied Physics Letters 118, 072101 (2021).

DOI: 10.1063/5.0040500

Ultrathin rock-salt type NbN films grown on atomically flat AlN/sapphire substrates

A. Kobayashi, K. Ueno, H. Fujioka

Journal of Crystal Growth 572, 126269 (2021).

DOI: 10.1016/j.jcrysgro.2021.126269

High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High-Temperature Annealing

Y. Sakurai, K. Ueno, A. Kobayashi, K. Uesugi, H. Miyake, H. Fujioka

Physics Status Solidi A 218, 2100074 (2021).

DOI: 10.1002/pssa.202100074

2020

Growth of InN ultrathin films on AlN for the application to field-effect transistors

D. Jeong, A. Kobayashi, K. Ueno, H. Fujioka

AIP Advances 10, 125221 (2020).

DOI: 10.1063/5.0035203

Coherent epitaxial growth of superconducting NbN ultrathin films on AlN by sputtering

A. Kobayashi, K. Ueno, H. Fujioka

Applied Physics Express 13, 061006 (2020).

DOI: 10.35848/1882-0786/ab916e

Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN

B. Ma, M. Tang, K. Ueno, A. Kobayashi, K. Morita, H. Fujioka, Y. Ishitani

Applied Physics Letters 117, 192103 (2020).

DOI: 10.1063/5.0023112

Autonomous growth of NbN nanostructures on atomically flat AlN surfaces

A. Kobayashi, K. Ueno, H. Fujioka

Applied Physics Letters 117, 231601 (2020).

DOI: 10.1063/5.0031604

2019

Characteristics of unintentionally doped and lightly Si-doped GaN prepared via pulsed sputtering

K. Ueno, A. Kobayashi, H. Fujioka

AIP Advances 9, 075123 (2019).

DOI: 10.1063/1.5103185

Wide range doping controllability of p-type GaN films prepared via pulsed sputtering

T. Fudetani, K. Ueno, A. Kobayashi, H. Fujioka

Applied Physics Letters 114, 032102 (2019).

DOI: 10.1063/1.5079673

Improving the electron mobility of polycrystalline InN grown on glass substrates using AlN crystalline orientation layers

M. Sakamoto, A. Kobayashi, Y. K. Fukai, K. Ueno, Y. Tokumoto, H. Fujioka

Journal of Applied Physics 126, 075701 (2019).

DOI: 10.1063/1.5117307

Operations of hydrogenated diamond metal-oxide-semiconductor field-effect transistors after annealing at 500 °C

J. Liu, H. Ohsato, B. Da, T. Teraji, A. Kobayashi, H. Fujioka, Y. Koide

Journal of Physics D: Applied Physics 52, 315104 (2019).

DOI: 10.1088/1361-6463/ab1e31

Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition

K. Ueno, T. Fudetani, A. Kobayashi, H. Fujioka

Scientific Reports 9, 20242 (2019).

DOI: 10.1038/s41598-019-56306-0

AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature

K. Nakamura, A. Kobayashi, K. Ueno, J. Ohta, H. Fujioka

Scientific Reports 9, 6254 (2019).

DOI: 10.1038/s41598-019-42822-6

2018

Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering

Y. Sakurai, K. Ueno, A. Kobayashi, J. Ohta, H. Miyake, H. Fujioka

APL Materials 6, 111103 (2018).

DOI: 10.1063/1.5051555

Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria-Stabilized Zirconia Using Pulsed Sputtering Deposition

A. Kobayashi, M. Oseki, J. Ohta, H. Fujioka

Physica Status Solidi B 255, 1700320 (2018).

DOI: 10.1002/PSSB.201700320

2017

Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering

K. Ueno, T. Fudetani, Y. Arakawa, A. Kobayashi, J. Ohta, H. Fujioka

APL Materials 5, 126102 (2017).

DOI: 10.1063/1.5008913

Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering

K. Ueno, Y. Arakawa, A. Kobayashi, J. Ohta, H. Fujioka

Applied Physics Express 10, 101002 (2017).

DOI: 10.7567/APEX.10.101002

Electrical properties of Si-doped GaN prepared using pulsed sputtering

Y. Arakawa, K. Ueno, H. Imabeppu, A. Kobayashi, J. Ohta, H. Fujioka

Applied Physics Letters 110, 042103 (2017).

DOI: 10.1063/1.4975056

Characterization of GaN films grown on hafnium foils by pulsed sputtering deposition

Hyeryun Kim, Jitsuo Ohta, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka

Physica Status Solidi A 214, 1700244 (2017).

DOI: 10.1002/pssa.201700244

Epitaxial growth of semipolar InAlN films on yttria-stabilized zirconia

M. Oseki, A. Kobayashi, J. Ohta, M. Oshima, H. Fujioka

Physica Status Solidi B 254, 1700211 (2017).

DOI: 10.1002/PSSB.201700211

Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO

A. Kobayashi, J. Ohta, H. Fujioka

Scientific Reports 7, 12820 (2017).

DOI: 10.1038/S41598-017-12518-W

Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils

Hyeryun Kim, Jitsuo Ohta, Kohei Ueno, Atsushi Kobayashi, Mari Morita, Yuki Tokumoto, Hiroshi Fujioka

Scientific Reports 7, 2112 (2017).

DOI: 10.1038/s41598-017-02431-7

2016

Epitaxial growth of GaN films on nearly lattice-matched hafnium substrates using a low-temperature growth technique

H. R. Kim, J. Ohta, S. Inoue, K. Ueno, A. Kobayashi, H. Fujioka

APL Materials 4, 076104 (2016).

DOI: 10.1063/1.4959119

High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

Y. Arakawa, K. Ueno, A. Kobayashi, J. Ohta, H. Fujioka

APL Materials 4, 086103 (2016).

DOI: 10.1063/1.4960485

InN thin-film transistors fabricated on polymer sheets using pulsed sputtering deposition at room temperature

K. S. Lye, A. Kobayashi, K. Ueno, J. Ohta, H. Fujioka

Applied Physics Letters 109, 032106 (2016).

DOI: 10.1063/1.4959777

High-current-density indium nitride ultrathin-film transistors on glass substrates

T. Itoh, A. Kobayashi, J. Ohta, H. Fujioka

Applied Physics Letters 109, 142104 (2016).

DOI: 10.1063/1.4964422

Epitaxial growth of In-rich InGaN on yttria-stabilized zirconia and its application to metal-insulator-semiconductor field-effect transistors

A. Kobayashi, K. S. Lye, K. Ueno, J. Ohta, H. Fujioka

Journal of Applied Physics 120, 085709 (2016).

DOI: 10.1063/1.4961876

Fabrication of InGaN thin-film transistors using pulsed sputtering deposition

T. Itoh, A. Kobayashi, K. Ueno, J. Ohta, H. Fujioka

Scientific Reports 6, 29500 (2016).

DOI: 10.1038/srep29500

2015

Investigation of anisotropic wafer bending curvature in a-plane GaN films grown on r-plane sapphire substrates

J. W. Shon, J. Ohta, S. Inoue, A. Kobayashi, H. Fujioka

Journal of Crystal Growth 424, 11 (2015).

DOI: 10.1016/j.jcrysgro.2015.04.041

2014

Structural properties of GaN films grown on multilayer graphene films by pulsed sputtering

J. W. Shon, J. Ohta, K. Ueno, A. Kobayashi, H. Fujioka

Applied Physics Express 7, 085502 (2014).

DOI: 10.7567/APEX.7.085502

AlGaN/GaN heterostructure prepared on a Si (110) substrate via pulsed sputtering

T. Watanabe, J. Ohta, T. Kondo, M. Ohashi, K. Ueno, A. Kobayashi, H. Fujioka

Applied Physics Letters 104, 182111 (2014).

DOI: 10.1063/1.4876449

Solid-phase epitaxy of InOxNy alloys via thermal oxidation of InN films on yttria-stabilized zirconia

A. Kobayashi, T. Itoh, J. Ohta, M. Oshima, H. Fujioka

Physica Status Solidi RRL 8, 362 (2014).

DOI: 10.1002/pssr.201400007

Field-effect transistors based on cubic indium nitride

M. Oseki, K. Okubo, A. Kobayashi, J. Ohta, H. Fujioka

Scientific Reports 4, 3951 (2014).

DOI: 10.1038/srep03951

Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering

J. W. Shon, J. Ohta, K. Ueno, A. Kobayashi, H. Fujioka

Scientific Reports 4, 5325 (2014).

DOI: 10.1038/srep05325

Theoretical study of InN growth on Mn-stabilized zirconia (111) substrates

Y. Guo, S. Inoue, A. Kobayashi, J. Ohta, H. Fujioka

Thin Solid Films 551, 110 (2014).

DOI: 10.1016/j.tsf.2013.11.100

2013

Theoretical Investigation of the Polarity Determination for c-Plane InN Grown on Yttria-Stabilized Zirconia (111) Substrates with Yttrium Surface Segregation

Y. Guo, S. Inoue, A. Kobayashi, J. Ohta, H. Fujioka

Applied Physics Express 6, 021002 (2013).

DOI: 10.7567/APEX.6.021002

Structural Properties of m-Plane InAlN Films Grown on ZnO Substrates with Room-Temperature GaN Buffer Layers

T. Kajima, A. Kobayashi, K. Ueno, J. Ohta, H. Fujioka, M. Oshima

Applied Physics Express 6, 021003 (2013).

DOI: 10.7567/APEX.6.021003

Electron mobility of ultrathin InN on yttria-stabilized zirconia with two-dimensionally grown initial layers

K. Okubo, A. Kobayashi, J. Ohta, M. Oshima, H. Fujioka

Applied Physics Letters 102, 022103 (2013).

DOI: 10.1063/1.4776210

Electrical properties of amorphous-Al2O3/single-crystal ZnO heterointerfaces

J. Liu, A. Kobayashi, J. Ohta, H. Fujioka, M. Oshima

Applied Physics Letters 103, 172101 (2013).

DOI: 10.1063/1.4826538

Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO

A. Kobayashi, K. Ueno, J. Ohta, M. Oshima, H. Fujioka

Applied Physics Letters 103, 192111 (2013).

DOI: 10.1063/1.4829478

Band Configuration of SiO2/m-Plane ZnO Heterointerface Correlated with Electrical Properties of Al/SiO2/ZnO Structures

J. Liu, A. Kobayashi, K. Ueno, J. Ohta, H. Fujioka, M. Oshima

Japanese Journal of Applied Physics 52, 011101 (2013).

DOI: 10.7567/JJAP.52.011101

Theoretical study of the initial stage of InN growth on cubic zirconia (111) substrates

Y. Guo, S. Inoue, A. Kobayashi, J. Ohta, H. Fujioka

Physica Status Solidi RRL 7, 207 (2013).

DOI: 10.1002/pssr.201206465

2012

Polarity control and growth mode of InN on yttria-stabilized zirconia (111) surfaces

A. Kobayashi, K. Okubo, J. Ohta, M. Oshima, H. Fujioka

Physica Status Solidi A 209, 2251 (2012).

DOI: 10.1002/pssa.201228287

2011

Polarity Dependence of Structural and Electronic Properties of Al2O3/InN Interfaces

K. Okubo, A. Kobayashi, J. Ohta, H. Fujioka, M. Oshima

Applied Physics Express 4, 091002 (2011).

DOI: 10.1143/APEX.4.091002

Dependence on composition of the optical polarization properties of m-plane InxGa1−xN commensurately grown on ZnO

H. Tamaki, A. Kobayashi, J. Ohta, M. Oshima, H. Fujioka

Applied Physics Letters 99, 061912 (2011).

DOI: 10.1063/1.3624462

Demonstration of enhanced optical polarization for improved deep ultraviolet light extraction in coherently grown semipolar Al0.83Ga0.17N/AlN on ZnO substrates

K. Ueno, A. Kobayashi, J. Ohta, M. Oshima, H. Fujioka

Applied Physics Letters 99, 121906 (2011).

DOI: 10.1063/1.3641876

Polarity replication across m-plane GaN/ZnO interfaces

A. Kobayashi, T. Ohnishi, M. Lippmaa, Y. Oda, A. Ishii, J. Ohta, M. Oshima, H. Fujioka

Applied Physics Letters 99, 181910 (2011).

DOI: 10.1063/1.3659008

Fabrication of densely packed arrays of GaN nanostructures on nano-imprinted substrates

F.Y. Shih, A. Kobayashi, S. Inoue, J. Ohta, H. Fujioka

Journal of Crystal Growth 319, 102 (2011).

DOI: 10.1016/j.jcrysgro.2011.01.078

Coherent growth of r-plane GaN films on ZnO substrates at room temperature

A. Kobayashi, K. Ueno, J. Ohta, H. Fujioka

Physica Status Solidi A 208, 834 (2011).

DOI: 10.1002/pssa.201026397

Band offsets of polar and nonpolar GaN/ZnO heterostructures determined by synchrotron radiation photoemission spectroscopy

J. W. Liu, A. Kobayashi, S. Toyoda, H. Kamada, A. Kikuchi, J. Ohta, H. Fujioka, H. Kumigashira, M. Oshima

Physica Status Solidi B 248, 956 (2011).

DOI: 10.1002/pssb.201046459

X-ray reciprocal space mapping study on semipolar InAlN films coherently grown on ZnO substrates

T. Kajima, A. Kobayashi, K. Shimomoto, K. Ueno, T. Fujii, J. Ohta, H. Fujioka, M. Oshima

Physica Status Solidi RRL 5, 400 (2011).

DOI: 10.1002/pssr.201105380

Growth of group III nitride nanostructures on nano-imprinted sapphire substrates

F.Y. Shih, A. Kobayashi, S. Inoue, J. Ohta, M. Oshima, H. Fujioka

Thin Solid Films 519, 6534 (2011).

DOI: 10.1016/j.tsf.2011.04.120

2010

Layer-by-Layer Growth of InAlN Films on ZnO(000-1) Substrates at Room Temperature

T. Kajima, A. Kobayashi, K. Shimomoto, K. Ueno, T. Fujii, J. Ohta, H. Fujioka, M. Oshima

Applied Physics Express 3, 021001 (2010).

DOI: 10.1143/APEX.3.021001

Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition

T. Fujii, A. Kobayashi, K. Shimomoto, J. Ohta, M. Oshima, H. Fujioka

Applied Physics Express 3, 021003 (2010).

DOI: 10.1143/APEX.3.021003

Improvement in the Crystalline Quality of Semipolar AlN(1-102) Films by Using ZnO Substrates with Self-Organized Nanostripes

K. Ueno, A. Kobayashi, J. Ohta, H. Fujioka

Applied Physics Express 3, 041002 (2010).

DOI: 10.1143/apex.3.041002

Characteristics of m-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition

K. Shimomoto, A. Kobayashi, K. Ueno, J. Ohta, M. Oshima, H. Fujioka

Applied Physics Express 3, 061001 (2010).

DOI: 10.1143/APEX.3.061001

Electronic structures of c-plane and a-plane AlN/ZnO heterointerfaces determined by synchrotron radiation photoemission spectroscopy

J. W. Liu, A. Kobayashi, K. Ueno, S. Toyoda, A. Kikuchi, J. Ohta, H. Fujioka, H. Kumigashira, M. Oshima

Applied Physics Letters 97, 252111 (2010).

DOI: 10.1063/1.3530445

Structural and Optical Properties of Nonpolar AlN(11-20) Films Grown on ZnO(11-20) Substrates with a Room-Temperature GaN Buffer Layer

K. Ueno, A. Kobayashi, J. Ohta, H. Fujioka

Japanese Journal of Applied Physics 49, 060213 (2010).

DOI: 10.1143/JJAP.49.060213

Room-Temperature Epitaxial Growth of High-Quality m-Plane InAlN Films on Nearly Lattice-Matched ZnO Substrates

T. Kajima, A. Kobayashi, K. Ueno, K. Shimomoto, T. Fujii, J. Ohta, H. Fujioka, M. Oshima, K. Mitamura

Japanese Journal of Applied Physics 49, 070202 (2010).

DOI: 10.1143/JJAP.49.070202

Characteristics of m-Plane InN Films Grown on ZnO Substrates at Room Temperature by Pulsed Laser Deposition

K. Shimomoto, A. Kobayashi, K. Mitamura, K. Ueno, J. Ohta, M. Oshima, H. Fujioka

Japanese Journal of Applied Physics 49, 080202 (2010).

DOI: 10.1143/JJAP.49.080202

Growth Orientation Control of Semipolar InN Films Using Yttria-Stabilized Zirconia Substrates

T. Fujii, A. Kobayashi, K. Shimomoto, J. Ohta, M. Oshima, H. Fujioka

Japanese Journal of Applied Physics 49, 080204 (2010).

DOI: 10.1143/JJAP.49.080204

Improvements in Optical Properties of Semipolar r-Plane GaN Films Grown Using Atomically Flat ZnO Substrates and Room-Temperature Epitaxial Buffer Layers

A. Kobayashi, S. Kawano, K. Ueno, J. Ohta, H. Fujioka

Japanese Journal of Applied Physics 49, 100202 (2010).

DOI: 10.1143/JJAP.49.100202

Structural characteristics of semipolar InN (11-2l) films grown on yttria stabilized zirconia substrates

T. Fujii, A. Kobayashi, J. Ohta, M. Oshima, H. Fujioka

Physica Status Solidi A 203, 2269 (2010).

DOI: 10.1002/pssa.201026215

Structural properties of semipolar AlxGa1−xN(1-103) films grown on ZnO substrates using room temperature epitaxial buffer layers

K. Ueno, A. Kobayashi, J. Ohta, H. Fujioka

Physica Status Solidi A 207, 2149 (2010).

DOI: 10.1002/pssa.201026209

Optical polarization characteristics of m-plane InGaN films coherently grown on ZnO substrates

A. Kobayashi, K. Shimomoto, J. Ohta, H. Fujioka, M. Oshima

Physica Status Solidi RRL 4, 188 (2010).

DOI: 10.1002/pssr.201004204

Investigation on the conversion efficiency of InGaN solar cells fabricated on GaN and ZnO substrates

S. Inoue, M. Katoh, A. Kobayashi, J. Ohta, H. Fujioka

Physica Status Solidi RRL 4, 88 (2010).

DOI: 10.1002/pssr.201004044

2009

Room-Temperature Epitaxial Growth of High Quality AlN on SiC by Pulsed Sputtering Deposition

K. Sato, J. Ohta, S. Inoue, A. Kobayashi, H. Fujioka

Applied Physics Express 2, 011003 (2009).

DOI: 10.1143/apex.2.011003

Characteristics of InN grown directly on Al2O3(0001) substrates by pulsed laser deposition

K. Mitamura, T. Honke, J. Ohta, A. Kobayashi, H. Fujioka, M. Oshima

Journal of Crystal Growth 311, 1316 (2009).

DOI: 10.1016/j.jcrysgro.2008.12.015

Epitaxial growth of InN films on lattice-matched EuN buffer layers

K. Shimomoto, J. Ohta, T. Fujii, R. Ohba, A. Kobayashi, M. Oshima, H. Fujioka

Journal of Crystal Growth 311, 4483 (2009).

DOI: 10.1016/j.jcrysgro.2009.08.020

Growth of group III nitride films by pulsed electron beam deposition

J. Ohta, K. Sakurada, F.-Y. Shih, A. Kobayashi, H. Fujioka

Journal of Solid State Chemistry 182, 1241 (2009).

DOI: 10.1016/j.jssc.2009.01.028

Epitaxial growth of high purity cubic InN films on MgO substrates using HfN buffer layers by pulsed laser deposition

R. Ohba, J. Ohta, K. Shimomoto, T. Fujii, K. Okamoto, A. Aoyama, T. Nakano, A. Kobayashi, H. Fujioka, M. Oshima

Journal of Solid State Chemistry 182, 2887 (2009).

DOI: 10.1016/j.jssc.2009.08.002

Room-temperature epitaxial growth of high-quality m-plane InGaN films on ZnO substrates

K. Shimomoto, A. Kobayashi, K. Ueno, J. Ohta, M. Oshima, H. Fujioka, H. Amanai, S. Nagao, H. Horie

Physica Status Solidi RRL 3, 124 (2009).

DOI: 10.1002/pssr.200903072

Room temperature growth of semipolar AlN (1-102) films on ZnO (1-102) substrates by pulsed laser deposition

K. Ueno, A. Kobayashi, J. Ohta, H. Fujioka, H. Amanai, S. Nagao, H. Horie

Physica Status Solidi RRL 3, 58 (2009).

DOI: 10.1002/pssr.200802263

2008

Low-temperature growth of high quality AlN films on carbon face 6H-SiC

M. H. Kim, J. Ohta, A. Kobayashi, H. Fujioka, M. Oshima

Physica Status Solidi RRL 2, 13 (2008).

DOI: 10.1002/pssr.200701246

2007

Room temperature epitaxial growth of m-plane GaN on lattice-matched ZnO substrates

A. Kobayashi, S. Kawano, Y. Kawaguchi, J. Ohta, H. Fujioka

Applied Physics Letters 90, 041908 (2007).

DOI: 10.1063/1.2433758

Growth temperature dependence of structural properties for AlN films on ZnO (000-1) substrates

K. Ueno, A. Kobayashi, J. Ohta, H. Fujioka

Applied Physics Letters 90, 141908 (2007).

DOI: 10.1063/1.2719167

Low temperature epitaxial growth of GaN films on LiGaO2 substrates

K. Sakurada, A. Kobayashi, Y. Kawaguchi, J. Ohta, H. Fujioka

Applied Physics Letters 90, 211913 (2007).

DOI: 10.1063/1.2737928

Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers

K. Ueno, A. Kobayashi, J. Ohta, H. Fujioka, H. Amanai, S. Nagao, H. Horie

Applied Physics Letters 91, 081915 (2007).

DOI: 10.1063/1.2775035

Epitaxial growth mechanisms of AlN on SiC substrates at room temperature

M. H. Kim, J. Ohta, A. Kobayashi, H. Fujioka, M. Oshima

Applied Physics Letters 91, 151903 (2007).

DOI: 10.1063/1.2795804

Growth of a-plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer

A. Kobayashi, S. Kawano, K. Ueno, J. Ohta, H. Fujioka, H. Amanai, S. Nagao, H. Horie

Applied Physics Letters 91, 191905 (2007).

DOI: 10.1063/1.2809361

Structural properties of GaN grown on Zn-face ZnO at room temperature

A. Kobayashi, Y. Shirakura, K. Miyamura, J. Ohta, H. Fujioka

Journal of Crystal Growth 305, 70 (2007).

DOI: 10.1016/j.jcrysgro.2007.04.027

2006

Polarity control of GaN grown on ZnO (000-1) surfaces

A. Kobayashi, Y. Kawaguchi, J. Ohta, H. Fujioka, K. Fujiwara, A. Ishii

Applied Physics Letters 88, 181907 (2006).

DOI: 10.1063/1.2200157

Investigation of the initial stage of GaN epitaxial growth on 6H-SiC (0001) at room temperature

M. H. Kim, M. Oshima, H. Kinoshita, Y. Shirakura, K. Miyamura, J. Ohta, A. Kobayashi, H. Fujioka

Applied Physics Letters 89, 031916 (2006).

DOI: 10.1063/1.2227616

Room temperature epitaxial growth of AlGaN on ZnO by pulsed laser deposition

A. Kobayashi, J. Ohta, Y. Kawaguchi, H. Fujioka

Applied Physics Letters 89, 111918 (2006).

DOI: 10.1063/1.2354413

Characteristics of Single Crystal ZnO Annealed in a Ceramic ZnO Box and Its Application for Epitaxial Growth of GaN

A. Kobayashi, J. Ohta, H. Fujioka

Japanese Journal of Applied Physics 45, 5724 (2006).

DOI: 10.1143/JJAP.45.5724

Characteristics of GaN/ZrB2 Heterointerfaces Prepared by Pulsed Laser Deposition

Y. Kawaguchi, A. Kobayashi, J. Ohta, H. Fujioka

Japanese Journal of Applied Physics 45, 6893 (2006).

DOI: 10.1143/JJAP.45.6893

Layer-by-Layer Growth of AlN on ZnO (000-1) Substrates at Room Temperature

K. Ueno, A. Kobayashi, J. Ohta, H. Fujioka

Japanese Journal of Applied Physics 45, L1139 (2006).

DOI: 10.1143/JJAP.45.L1139

Characteristics of InGaN with High In Concentrations Grown on ZnO at Low Temperatures

A. Kobayashi, J. Ohta, H. Fujioka

Japanese Journal of Applied Physics 45, L611 (2006).

DOI: 10.1143/JJAP.45.L611

Low temperature epitaxial growth of In0.25Ga0.75N on lattice-matched ZnO by pulsed laser deposition

A. Kobayashi, J. Ohta, H. Fujioka

Journal of Applied Physics 99, 123513 (2006).

DOI: 10.1063/1.2206883

Heteroepitaxial growth of GaN on atomically flat LiTaO3(0001) using low-temperature AIN buffer layers

Y. Tsuchiya, A. Kobayashi, J. Ohta, H. Fujioka, M. Oshima

Journal of Crystal Growth 293, 22 (2006).

DOI: 10.1016/j.jcrysgro.2006.05.006

Effects of low-temperature-grown buffers on pulsed-laser deposition of GaN on LiNbO3

Y. Tsuchiya, M. Oshima, A. Kobayashi, J. Ohta, H. Fujioka

Journal of Vacuum Science & Technology A 24, 2021 (2006).

DOI: 10.1116/1.2345644

Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4

J. Ohta, K. Mitamura, A. Kobayashi, T. Honke, H. Fujioka, and M. Oshima

Solid State Communications 137, 208 (2006).

DOI: 10.1016/j.ssc.2005.11.015

2005

Room-temperature epitaxial growth of GaN on lattice-matched ZrB2 substrates by pulsed-laser deposition

Y. Kawaguchi, J. Ohta, A. Kobayashi,H. Fujioka

Applied Physics Letters 87, 221907 (2005).

DOI: 10.1063/1.2137876

GaN Heteroepitaxial Growth on LiTaO3(0001) Step Substrates by Pulsed Laser Deposition

Y. Tsuchiya, A. Kobayashi, J. Ohta, H. Fujioka, M. Oshima

Japanese Journal of Applied Physics 44, L1522 (2005).

DOI: 10.1143/JJAP.44.L1522

GaN heteroepitaxial growth on LiNbO3(0001) step substrates with AlN buffer layers

Y. Tsuchiya, A. Kobayashi, J. Ohta, H. Fujioka, M. Oshima

Physica Status Solidi A 202, R145 (2005).

DOI: 10.1002/pssa.200521226

2004

Room Temperature Layer by Layer Growth of GaN on Atomically Flat ZnO

A. Kobayashi, H. Fujioka, J. Ohta, M. Oshima

Japanese Journal of Applied Physics 43, L53 (2004).

DOI: 10.1143/JJAP.43.L53

Effect of ambient gas on pulsed laser deposition of group III nitrides

S. Ito, H. Fujioka, J. Ohta, A. Kobayashi, T. Honke, and M. Oshima

Thin Solid Films 457, 118 (2004).

DOI: 10.1016/j.tsf.2003.12.006